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Publications in Conference Proceedings

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Reliability Analysis of Random Telegraph Noisebased True Random Number Generators

1

Zanotti, Tommaso and Ranjan, Alok and O’Shea, Sean J. and Raghavan, Nagarajan and Thamankar, Ramesh and Pey, Kin Leong and Maria Puglisi, Francesco

2023 IEEE International Integrated Reliability Workshop (IIRW), 1-6 (2023)

IEEE

https://doi.org/10.1109/IIRW59383.2023.10477697

Observation of resistive switching by physical analysis techniques

2

Pey, KL; Mei, S; Ranjan, A; Raghavan, N; Shubhakar, K; Thamankar, R; Bosman, M; O'Shea, SJ;

2016 5th International Symposium on Next-Generation Electronics (ISNE), 001-002 (2016)

IEEE

https://doi.org/10.1109/ISNE.2016.7543299

CAFM based spectroscopy of stress-induced defects in HfO 2 with experimental evidence of the clustering model and metastable vacancy defect state

3

Ranjan, Alok; Raghavan, Nagarajan; Shubhakar, Kalya; Thamankar, Ramesh; Molina, Joel; O'Shea, Sean J; Bosman, Michael; Pey, Kin-Leong;

2016 IEEE International Reliability Physics Symposium (IRPS), 7A-4-1-7A-4-7 (2016)

IEEE

https://doi.org/10.1109/IRPS.2016.7574576

Understanding the switching mechanism in RRAM using in-situ TEM

4

Pey, KL; Thamankar, R; Sen, M; Bosman, M; Raghavan, N; Shubhakar, K;

2016 IEEE Silicon Nanoelectronics Workshop (SNW), 36-37 (2016)

IEEE

https://doi.org/10.1109/SNW.2016.7577973

Understanding defect kinetics in ultra-thin dielectric logic and memory devices using random telegraph noise analysis

5

Raghavan, N; Liu, WH; Thamankar, R; Bosman, M; Pey, KL;

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, 149-153 (2015)

IEEE

https://doi.org/10.1109/IPFA.2015.7224354

Localized Random Telegraphic Noise Study in HfO 2 dielectric stacks using Scanning Tunneling Microscopy—Analysis of process and stress-induced traps

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ernst, A; Meyerheim, HL; Thamankar, R; Ostanin, S; Soyka, E; Mertig, I; Maznichenko, I;

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, 458-462 (2015)

IEEE

https://doi.org/10.1109/IPFA.2015.7224356

Nanoscale physical analysis of localized breakdown events in HfO 2/SiO X dielectric stacks: A correlation study of STM induced BD with C-AFM and TEM

7

Shubhakar, K; Pey, KL; Bosman, M; Thamankar, R; Kushvaha, SS; Loke, YC; Wang, ZR; Raghavan, N; Wu, X; O'Shea, SJ;

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 1-7 (2012)

IEEE

https://doi.org/10.1109/IPFA.2012.6306264

Molecular Beam Epitaxy Growth of Organic Spin Valves

8

Pi, K; Wang, W; Thamankar, R; Chye, Y; Chiang, YF; Li, Y; Kawakami, RK;

2007 APS March Meeting Abstracts, V25. 008 (2007)

American Physical Society

http://meetings.aps.org/link/BAPS.2007.MAR.V25.8

Magnetooptical Studies of Organic/Ferromagnetic Hybrid Structures

9

Kawakami, Roland; Chiang, Richard; Thamankar, Ramesh;

2005 APS March Meeting Abstracts, A10. 001 (2005)

American Physical Society

http://meetings.aps.org/link/BAPS.2005.MAR.A10.1

Reorientation transition in ultrathin alloy films

10

Thamankar, R; Ostroukhova, A; Schumann, FO;

2002 IEEE International Magnetics Conference (INTERMAG), DR3 (2002)

IEEE

https://doi.org/10.1109/INTMAG.2002.1001065
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